chip type 2c2222akv geometry 0400 polarity npn data sheet no. cp2222a 2n2219a 2n2222a ref: mil-prf-19500l/255 chip type 2c2222akv by semicoa semiconductors meets the standards for mil-prf-19500l appendix g, class k and provides performance similar to these devices. product summary part number 2n2222a , 2n2222, 2n2219, 2n2219a, 2n2219al 2N2N2222AUB , sd2222a, sd2222af, sq2222a, sq2222af, 2n5582, 2n6989, 2n6990 applications: designed for gen- eral purpose switching and amplifier applications. radiation: consult factory for availability of radiation data for this device. features: low v ce(sat) voltages high current-gain-bandwidth product 20 mils 20 mils b e top al - 24 k? backside au - 6.5 k? emitter 4.0 mils x 4.0 mils base 4.0 mils x 4.0 mils die thickness chip area top surface 20 mils x 20 mils silox passivated mechanical specifications metallization bonding pad size 8 mils nominal
due to the limitations of probe testing, only dc parameters are tested. this must be done with pulse width less than 300 s, duty cycle less than 2%. parameter test conditions min max unit i cbo1 v cb = 75 v dc --- 10 a dc i ebo1 v eb = 6 v dc --- 10 a dc v (br)ceo bias condition d; i c = 10 ma dc; pulsed 50 --- v dc i ces bias condition c; v ce = 50 v dc --- 50 na dc i cbo2 bias condition d; v cb = 60 v dc --- 10 na dc i ebo2 bias condition d; v eb = 4 v dc --- 10 na dc h fe1 v ce = 10 v dc; i c = 0.1 ma dc 50 --- --- h fe2 v ce = 10 v dc; i c = 1.0 ma dc 75 325 --- h fe3 v ce = 10 v dc; i c = 10 ma dc 100 --- --- h fe4 v ce = 10 v dc; i c = 150 ma dc; pulsed 100 300 --- h fe5 v ce = 10 v dc; i c = 500 ma dc; pulsed 30 --- --- v ce(sat)1 i c = 150 ma dc; i b = 15 ma dc; pulsed --- 0.3 v dc v ce(sat)2 i c = 500 ma dc; i b = 50 ma dc; pulsed --- 1.0 v dc v be(sat)1 test condition a; i c = 150 ma dc; i b = 15 ma dc; pulsed 0.6 1.2 v dc v be(sat)2 test condition a; i c = 500 ma dc; i b = 50 ma dc; pulsed --- 2.0 v dc i cbo3 bias condition d; v cb = 60 v dc --- 10 a dc h fe6 v ce = 10 v dc; i c = ma dc 35 --- --- electrical characteristics t a = 25 o c (group a2, a3)
flowchart mil-prf-19500l appendix g table xii. die element evaluation requirements mil-std-750 quantity reference paragraph sub- group class k test method condition (accept no.) 1 x electrical test 100 percent g.5.2.1 2 x visual inspection 2072 100 percent g.5.2.2 3a x internal / die inspec- tion 2072 10(0) g.5.2.3.1 3b x sample assembly 10 pieces min. g.5.2.3.2 4 x stabilization 1032 c 10(0) g.5.2.4.1 t = 24 hours min x temperature cycling 1051 c x mechanical shock 2016 y1 direction or constant accelera- tion 2006 y1 direction x electrical test group a, (read/record) subgroups 2,3 x htrb screen 10 1 / x electrical test group a, 2 / (read/record) subgroup 2 x burn-in screen 12 1 / x electrical test group a, 2 / (read/record) subgroup 2 x steady state life 3 / transistors 1039 b x electrical test group a, 2 / (read/record) subgroups 2, 3 5a x wire bond evalua- tion 2037 condition a 10(0) wires g.5.2.5.1 or 20(1) wires 5b x die shear evalua- tion 2017 5(0) g.5.2.5.2 or 10(1) 6 x sem 2077 see test method g.5.2.6 2077 4 / 1 / htrb and burn-in shall be performed when specified on the applicable performance specification sheet. 2 / thermal impedance shall not apply. 3 / time and temperature requirements in accordance with table xi. 4 / may be performed at any time.
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